PART |
Description |
Maker |
TGF2022-06 |
DC - 20 GHz Discrete power pHEMT
|
TriQuint Semiconductor,Inc.
|
UPB1502GR UPB1502GR1 UPB1502GR1-E1 UPB1502GR-E1 |
1.7 GHz/ 2.0 GHz LOW-POWER TWO-MODULUS PRESCALER DIVIDED-BY-64/65, 128/129 1.7千兆 2.0 GHz的低功耗双分频DIVIDED-BY-64/65,一百二十九分之一百二十八 1.7 GHz/ 2.0 GHz Low-Power Two-Modulus Prescaler(1.7GHz 2.0GHz 定标
|
NEC, Corp. NEC Corp.
|
TGF4250-SCC |
DC - 10.5 GHz Discrete HFET X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET
|
TriQuint Semiconductor, Inc.
|
10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 1000V 1A Ultra-Fast Discrete Diode in a SMB package 100V 1A Ultra-Fast Discrete Diode in a SMB package 200V 1A Ultra-Fast Discrete Diode in a SMB package 400V 1A Ultra-Fast Discrete Diode in a SMB package 600V 1A Ultra-Fast Discrete Diode in a SMB package 800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors International Rectifier, Corp. IRF[International Rectifier]
|
7210 8111 7232 8846 6150 7683 7226 7205 8601 7715 |
T-1 subminiature, miniature flanged lamp. 12.0 volts, 0.040 amps. T-1 subminiature, wire lead lamp. 28.0 volts, 0.024 amps. T-1 subminiature, wire lead lamp. 5.0 volts, 0.021 amps. T-1 subminiature, wire lead lamp. 2.5 volts, 0.320 amps. T-1 subminiature, miniature flanged lamp. 1.5 volts, 0.075 amps. T-1 subminiature, bi-pin lamp. 5.0 volts, 0.075 amps. T-1 subminiature, bi-pin lamp. 1.5 volts, 0.075 amps. T-1 subminiature, wire lead lamp. 1.5 volts, 0.075 amps. T-1 subminiature, short type lamp. 5.0 volts, 0.075 amps. T-1 subminiature, wire lead lamp. 5.0 volts, 0.075 amps. T-1 Subminiature Lamps 的T 1微型灯泡 IC-SM-256K CMOS SRAM IC,ARINC,429,LINE,RCVR,EXT Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0013-0 00; No. of Positions: 8; Connector Type: Wire Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0027-5 00; No. of Positions: 8; Connector Type: Wire Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0011-5 00; No. of Positions: 6; Connector Type: Wire to 85; General Description: Housing; Double row; Crimping Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0025-0 00; No. of Positions: 4; Connector Type: Wire Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0008-0 00; No. of Positions: 3; Connector Type: Wire Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0028-8 00; No. of Positions: 10; Connector Type: Wire Direct mounting on the PCB, Crimping connection, Discrete wire connectors; HRS No: 544-0043-9 00; No. of Positions: 9; Connector Type: Wire; Contact Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0010-2 00; No. of Positions: 5; Connector Type: Wire Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0038-1 00; No. of Positions: 16; Connector Type: Wire Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0009-3 00; No. of Positions: 4; Connector Type: Wire Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0036-6 00; No. of Positions: 12; Connector Type: Wire CONNECTOR ACCESSORY T-Bi-Pin T-1 Subminiature Lamps T-1 subminiature, miniature flanged lamp. 1.35 volts, 0.220 amps. T-1 subminiature, miniature flanged lamp. 2.5 volts, 0.320 amps. T-1 subminiature, short type lamp. 5.0 volts, 0.060 amps.
|
International Light Technologies, Inc. International Light Technologies Inc. GILWAY[Gilway Technical Lamp] http://
|
BFY193 |
HIREL NPN SILICON RF TRANSISTOR (HIREL DISCRETE AND MICROWAVE SEMICONDUCTOR FOR LOW NOISE, HIGH GAIN BROADBAND AMPLIFIERS UP TO 2 GHZ.) From old datasheet system
|
Siemens Semiconductor Group Infineon
|
RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
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ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
8TQ080S 8TQ100S 8TQ 8TQ10 8TQ100STRR 8TQ080STRR |
16 A SPDT MINIATURE POWER RELAY SCHOTTKY RECTIFIER 100V 8A Schottky Discrete Diode in a D2-Pak package 80V 8A Schottky Discrete Diode in a D2-Pak package
|
IRF[International Rectifier]
|
SA1056 |
CDMA 1.5-Watt 1.93 GHz to 1.99 GHz Linear Power Amplifier Module
|
ETC[ETC]
|
SA1070 |
TDMA 8-Watt 1.93 GHz to 1.99 GHz Linear Power Amplifier Module
|
ETC[ETC]
|
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